ELECTRONS IN SILICON MICROSTRUCTURES

[1] SCALING THEORY OF LOCALIZATION - ABSENCE OF QUANTUM DIFFUSION IN 2 DIMENSIONS [J]. PHYSICAL REVIEW LETTERS, 1979, 42 (10) : 673 - 676

[2] COOPER JA, 1981, ELECTRON DEVIC LETT, V2, P171, DOI 10.1109/EDL.1981.25387

[3] ONE-DIMENSIONAL ELECTRON LOCALIZATION AND CONDUCTION BY ELECTRON ELECTRON-SCATTERING IN NARROW SILICON [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (31): : 5663 - 5676

[4] THE TRANSITION FROM TWO-DIMENSIONAL TO ONE-DIMENSIONAL ELECTRONIC TRANSPORT IN NARROW SILICON ACCUMULATION LAYERS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (36): : 1287 - 1297

[5] TRANSITION FROM 1-DIMENSIONAL TO TWO-DIMENSIONAL HOPPING CONDUCTIVITY IN SILICON ACCUMULATION LAYERS [J]. PHYSICA B & C, 1983, 117 (MAR): : 661 - 666

[6] CONDUCTANCE IN RESTRICTED-DIMENSIONALITY ACCUMULATION LAYERS [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (03) : 196 - 199

[7] ONE-DIMENSIONAL CONDUCTANCE IN SILICON MOSFETS [J]. SURFACE SCIENCE, 1984, 142 (1-3) : 1 - 13

[8] SINGLE ELECTRON SWITCHING EVENTS IN NANOMETER-SCALE SI MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) : 1669 - 1674

[9] MICROFABRICATION AS A SCIENTIFIC TOOL [J]. SCIENCE, 1983, 221 (4606) : 117 - 121

[10] HOWARD RE, 1982, VLSI ELECTRONICS, V5

[1] SCALING THEORY OF LOCALIZATION - ABSENCE OF QUANTUM DIFFUSION IN 2 DIMENSIONS [J]. PHYSICAL REVIEW LETTERS, 1979, 42 (10) : 673 - 676

[2] COOPER JA, 1981, ELECTRON DEVIC LETT, V2, P171, DOI 10.1109/EDL.1981.25387

[3] ONE-DIMENSIONAL ELECTRON LOCALIZATION AND CONDUCTION BY ELECTRON ELECTRON-SCATTERING IN NARROW SILICON [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (31): : 5663 - 5676

[4] THE TRANSITION FROM TWO-DIMENSIONAL TO ONE-DIMENSIONAL ELECTRONIC TRANSPORT IN NARROW SILICON ACCUMULATION LAYERS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (36): : 1287 - 1297

[5] TRANSITION FROM 1-DIMENSIONAL TO TWO-DIMENSIONAL HOPPING CONDUCTIVITY IN SILICON ACCUMULATION LAYERS [J]. PHYSICA B & C, 1983, 117 (MAR): : 661 - 666

[6] CONDUCTANCE IN RESTRICTED-DIMENSIONALITY ACCUMULATION LAYERS [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (03) : 196 - 199

[7] ONE-DIMENSIONAL CONDUCTANCE IN SILICON MOSFETS [J]. SURFACE SCIENCE, 1984, 142 (1-3) : 1 - 13

[8] SINGLE ELECTRON SWITCHING EVENTS IN NANOMETER-SCALE SI MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) : 1669 - 1674

[9] MICROFABRICATION AS A SCIENTIFIC TOOL [J]. SCIENCE, 1983, 221 (4606) : 117 - 121

[10] HOWARD RE, 1982, VLSI ELECTRONICS, V5