SOLAR-CELL OPERATION UNDER CONCENTRATED ILLUMINATION

[1] ADLER MS, 1976, DEC DIG IEEE INT EL

[2] ALWIN VC, 1976, THESIS U MASSACHUSET

[3] [Anonymous], 1955, J APPL PHYS, DOI [10.1063/1.1722034, DOI 10.1063/1.1722034]

[4] AUGER-RECOMBINATION IN SI [J]. SOLID STATE COMMUNICATIONS, 1973, 13 (01) : 93 - 95

[5] BILENKO DI, 1974, SOV PHYS J, V17, P1456

[6] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[7] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[8] STUDY OF EFFICIENCY IN LOW RESISTIVITY SILICON SOLAR CELLS [J]. SOLID-STATE ELECTRONICS, 1976, 19 (02) : 95 - 102

[9] Elliot RJ., 1974, INTRO SOLID STATE PH

[10] 2-DIMENSIONAL CARRIER FLOW IN A TRANSISTOR STRUCTURE UNDER NONISOTHERMAL CONDITIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (01) : 50 - 57

[1] ADLER MS, 1976, DEC DIG IEEE INT EL

[2] ALWIN VC, 1976, THESIS U MASSACHUSET

[3] [Anonymous], 1955, J APPL PHYS, DOI [10.1063/1.1722034, DOI 10.1063/1.1722034]

[4] AUGER-RECOMBINATION IN SI [J]. SOLID STATE COMMUNICATIONS, 1973, 13 (01) : 93 - 95

[5] BILENKO DI, 1974, SOV PHYS J, V17, P1456

[6] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[7] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[8] STUDY OF EFFICIENCY IN LOW RESISTIVITY SILICON SOLAR CELLS [J]. SOLID-STATE ELECTRONICS, 1976, 19 (02) : 95 - 102

[9] Elliot RJ., 1974, INTRO SOLID STATE PH

[10] 2-DIMENSIONAL CARRIER FLOW IN A TRANSISTOR STRUCTURE UNDER NONISOTHERMAL CONDITIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (01) : 50 - 57