MBE GROWTH OF LATTICE-MISMATCHED LAYERS - INXGA1-XAS/INAS AND INXGA1-XAS/INP FROM X = 1 TO X = 0

被引：17

作者：

TABUCHI, M

NODA, S

SASAKI, A

机构：

[1] Department of Electrical Engineering, Kyoto University, Kyoto

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 99卷 / 1-4期

关键词：

Microscopic Examination--Transmission Electron Microscopy - Molecular Beam Epitaxy - X-rays--Diffraction;

D O I：

10.1016/0022-0248(90)90535-S

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigate growth phenomena of InxGa1-xAs (0≦x≦1) layers on various substrates such as InAs and InP. The layer quality depends not simply on the degree of lattice-mismatching, but also on the other factors such as two- or three-dimensional growth near the heterointerface, compound or alloy grown layers, and compressed or tensile strain. © 1990.

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页码：315 / 318

页数：4

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