MOCVD GROWTH OF GAAS1-XPX(X=0-1) AND FABRICATION OF GAAS0.6P0.4 LED ON SI SUBSTRATE

被引：4

作者：

TAKEYASU, M ^{[1
]}

SAKAI, S ^{[1
]}

SOGA, T ^{[1
]}

UMENO, M ^{[1
]}

机构：

[1] NAGOYA UNIV,FAC ENGN,DEPT ELECTR,CHIKUSA KU,NAGOYA,AICHI 464,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 09期

关键词：

D O I：

10.1143/JJAP.25.1388

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1388 / 1392

页数：5

共 14 条

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