A COMPARATIVE-STUDY OF GROWTH OF ZNSE FILMS ON GAAS BY CONVENTIONAL MOLECULAR-BEAM EPITAXY AND MIGRATION ENHANCED EPITAXY

被引：20

作者：

LILJA, J

KESKINEN, J

HOVINEN, M

PESSA, M

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584800

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：593 / 598

页数：6

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