INFLUENCE OF STRESS ON THE HIGH COERCIVE FORCE OF GAMMA-FE2O3 THIN-FILMS

被引：9

作者：

LANGLET, M

JOUBERT, JC

机构：

[1] Lab des Materiaux et du Genie, Physique, St Martin d'Heres, Fr, Lab des Materiaux et du Genie Physique, St Martin d'Heres, Fr

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1988年 / 24卷 / 02期

关键词：

D O I：

10.1109/20.11572

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

IRON OXIDES

引用

页码：1691 / 1693

页数：3

共 10 条

[1]

BANDO Y, 1980, FERRITES P INT C JAP, P602

[2] CEMS AND FARADAY-ROTATION STUDY OF GAMMA-FE2O3-FE3O4 FILMS OBTAINED BY A NEW PYROLISIS TECHNIQUE [J].

CUSIDO, JA ;

OBRADORS, X ;

FONTCUBERTA, J ;

ISALGUE, A ;

CANAL, F ;

CORTADELLAS, J ;

LANGLET, M ;

JOUBERT, JC .

IEEE TRANSACTIONS ON MAGNETICS, 1987, 23 (01) :74-76

[3] THE DETERMINATION OF LATTICE-PARAMETERS AND STRAINS IN STRESSED THIN-FILMS USING X-RAY-DIFFRACTION WITH SEEMANN-BOHLIN FOCUSING [J].

HAASE, EL .

THIN SOLID FILMS, 1985, 124 (3-4) :283-291

[4]

JAMES MR, 1980, TREATISE MATERIALS A, V19, P1

[5] GAMMA-FE2O3 FILMS WITH UNIAXIAL ANISOTROPY OBTAINED BY A NEW ASSISTED CVD TECHNIQUE [J].

LANGLET, M ;

LABEAU, M ;

JOUBERT, JC .

IEEE TRANSACTIONS ON MAGNETICS, 1986, 22 (05) :600-602

[6] PREPARATION OF THIN-FILMS IN THE SYSTEM GAMMA-FE2O3-FE3O4 FOR RECORDING MEDIA BY SPRAY PYROLYSIS OF ORGANOMETALLIC SOLUTIONS USING AN ULTRASONIC PUMP [J].

LANGLET, M ;

LABEAU, M ;

BOCHU, B ;

JOUBERT, JC .

IEEE TRANSACTIONS ON MAGNETICS, 1986, 22 (03) :151-156

[7]

LANGLET M, 1986, THESIS INP GRENOBLE

[8] ORIGINS OF STRESS-INDUCED PERPENDICULAR MAGNETIC-ANISOTROPY OF SPUTTERED IRON-OXIDE THIN-FILMS [J].

LIN, JK ;

SIVERTSEN, JM ;

JUDY, JH .

IEEE TRANSACTIONS ON MAGNETICS, 1986, 22 (05) :594-596

[9] RESIDUAL-STRESS MEASUREMENTS ON CHROMIUM FILMS BY X-RAY-DIFFRACTION USING SIN2-PSI METHOD [J].

WONG, SM .

THIN SOLID FILMS, 1978, 53 (01) :65-71

[10] HIGH-DENSITY RECORDING CHARACTERISTICS OF SPUTTERED GAMMA-FE2O3 THIN-FILM DISKS [J].

YOSHII, S ;

ISHII, O ;

HATTORI, S ;

NAKAGAWA, T ;

ISHIDA, G .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :2556-2560

← 1 →