INGAAS GAINASP GAINP STRAINED-LAYER QUANTUM-WELL SEPARATE-CONFINEMENT HETEROSTRUCTURES GROWN BY OMVPE

被引：10

作者：

GROVES, SH

机构：

[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173-9108

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 124卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90546-U

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Quaternary confinement layers in InGaAs strained-layer quantum well structures based on GaInAsP/GaAs materials have led to devices of very high differential efficiencies. Growth of these structures by OMVPE is described. A thin layer of GaAs inserted between the InGaAs and the upper GaInAsP confinement layer has a very beneficial effect on the structural quality of the top cladding layer and on the device performance. It is conjectured that the thin GaAs serves as a template to maintain the in-plane lattice constant of the structure.

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收藏

页码：747 / 750

页数：4

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