MEAN FREE PATH OF HOT-ELECTRONS AT SURFACE OF BORON-DOPED SILICON

被引：26

作者：

VERWEY, JF ^{[1
]}

KRAMER, RP ^{[1
]}

MAAGT, BJD ^{[1
]}

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 06期

关键词：

D O I：

10.1063/1.321938

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2612 / 2619

页数：8

相关论文

共 32 条

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[8] BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES
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[9] TEMPERATURE DEPENDENCE OF HOT ELECTRON DRIFT VELOCITY IN SILICON AT HIGH ELECTRIC FIELD
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[10] STRAIN EFFECTS AROUND PLANAR DIFFUSED STRUCTURES
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