IDENTIFICATION OF A BISTABLE DEFECT IN SILICON - THE CARBON INTERSTITIAL-CARBON SUBSTITUTIONAL PAIR

被引：52

作者：

SONG, LW ^{[1
]}

BENSON, BW ^{[1
]}

WATKINS, GD ^{[1
]}

机构：

[1] LEHIGH UNIV,SHERMAN FAIRCHILD LAB,BETHLEHEM,PA 18015

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 15期

关键词：

D O I：

10.1063/1.98717

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1155 / 1157

页数：3

共 14 条

[1]

BENTON JL, 1983, DEFECTS SEMICONDUCTO, V2, P95

[2] EPR OF A JAHN-TELLER DISTORTED (111) CARBON INTERSTITIALLY IN IRRADIATED SILICON [J].

BROWER, KL .

PHYSICAL REVIEW B, 1974, 9 (06) :2607-2617

[3] CONFIGURATIONALLY MULTISTABLE DEFECT IN SILICON [J].

CHANTRE, A ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1986, 48 (15) :1000-1002

[4] METASTABLE-DEFECT BEHAVIOR IN SILICON - CHARGE-STATE-CONTROLLED REORIENTATION OF IRON-ALUMINUM PAIRS [J].

CHANTRE, A ;

BOIS, D .

PHYSICAL REVIEW B, 1985, 31 (12) :7979-7988

[5] TRANSIENT CAPACITANCE STUDIES OF AN ELECTRON TRAP AT EC-ET=0.105EV IN PHOSPHORUS-DOPED SILICON [J].

JELLISON, GE .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5715-5719

[6]

Kimerling L. C., 1977, International Conference on Radiation Effects in Semiconductors, P221

[7]

Kimerling L. C., 1979, International Conference on Defects and Radiation Effects in Semiconductors, P273

[8] DEFECT ENERGY-LEVELS IN BORON-DOPED SILICON IRRADIATED WITH 1-MEV ELECTRONS [J].

MOONEY, PM ;

CHENG, LJ ;

SULI, M ;

GERSON, JD ;

CORBETT, JW .

PHYSICAL REVIEW B, 1977, 15 (08) :3836-3843

[9] NEW VACANCY-RELATED DEFECTS IN NORMAL-TYPE SILICON [J].

SONG, LW ;

BENSON, BW ;

WATKINS, GD .

PHYSICAL REVIEW B, 1986, 33 (02) :1452-1455

[10]

SONG LW, 1987, B AM PHYS SOC, V32, P403

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