NEW VACANCY-RELATED DEFECTS IN NORMAL-TYPE SILICON

被引：56

作者：

SONG, LW ^{[1
]}

BENSON, BW ^{[1
]}

WATKINS, GD ^{[1
]}

机构：

[1] LEHIGH UNIV,SHERMAN FAIRCHILD LAB,BETHLEHEM,PA 18015

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.33.1452

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1452 / 1455

页数：4

共 22 条

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