DEVIATIONS FROM OHMS LAW IN SEMICONDUCTORS

被引：8

作者：

JAGGI, R

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1968年 / 29卷 / 09期

关键词：

D O I：

10.1016/0022-3697(68)90113-3

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：1699 / &

共 12 条

[1] ABHANGIGKEIT DER ANISOTROPIE DER ELEKTRISCHEN LEITFAHIGKEIT DES SILIZIUMS VOM ELEKTRISCHEN FELD [J].

ASCHE, M ;

BOITSCHE.BL ;

SARBEJ, OG .

PHYSICA STATUS SOLIDI, 1965, 9 (02) :323-&

[2] ZUR FRAGE DER BEWEGLICHKEIT DER HEISSEN ELEKTRONEN IN N-SILIZIUM BEI 77-DEGREES-K [J].

ASCHE, M ;

SARBEJ, OG .

PHYSICA STATUS SOLIDI, 1964, 7 (01) :339-350

[3] DEVIATIONS FROM OHMS LAW IN GERMANIUM AND SILICON [J].

BROWN, MACS .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (3-4) :218-227

[4] NON-OHMIC BEHAVIOUR IN SILICON [J].

DAVIES, EA ;

GOSLING, DS .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (APR) :413-&

[5] CONDUCTIVITY ANISOTROPY + HOT ELECTRON TEMPERATURE IN SILICON [J].

GIBBS, WEK .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) :247-&

[6] EFFECT OF ELECTRON AND IMPURITY DENSITY ON THE FIELD-DEPENDENCE OF MOBILITY IN GERMANIUM [J].

GUNN, JB .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :239-241

[7]

LANDOLTBORNSTEI, 1959, ZAHLENWERTE FUNKT ED

[8] THE FIELD-DEPENDENCE OF CARRIER MOBILITY IN SILICON AND GERMANIUM [J].

PRIOR, AC .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 12 (02) :175-180

[9] MOBILITIES OF ELECTRONS IN HIGH ELECTRIC FIELDS [J].

RYDER, EJ ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1951, 81 (01) :139-140

[10] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J].

RYDER, EJ .

PHYSICAL REVIEW, 1953, 90 (05) :766-769

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