A STUDY OF SILICON INTERSTITIAL KINETICS USING SILICON MEMBRANES - APPLICATIONS TO 2D DOPANT DIFFUSION

被引：26

作者：

AHN, ST ^{[1
]}

GRIFFIN, PB ^{[1
]}

SHOTT, JD ^{[1
]}

PLUMMER, JD ^{[1
]}

TILLER, WA ^{[1
]}

机构：

[1] STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 12期

关键词：

D O I：

10.1063/1.339028

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4745 / 4755

页数：11

共 37 条

[1]

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[4]

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[7]

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[8]

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[9] MEASUREMENT OF SILICON INTERSTITIAL DIFFUSIVITY [J].

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APPLIED PHYSICS LETTERS, 1985, 47 (03) :319-321

[10] MODEL FOR BULK EFFECTS ON SI INTERSTITIAL DIFFUSIVITY IN SILICON [J].

GRIFFIN, PB ;

AHN, ST ;

TILLER, WA ;

PLUMMER, JD .

APPLIED PHYSICS LETTERS, 1987, 51 (02) :115-117

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