MODELING AND SIMULATIONS OF A POSITIVE CHEMICALLY AMPLIFIED PHOTORESIST FOR X-RAY-LITHOGRAPHY

被引：34

作者：

KRASNOPEROVA, AA

KHAN, M

RHYNER, S

TAYLOR, JW

ZHU, Y

CERRINA, F

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.587571

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3900 / 3904

页数：5

共 21 条

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[5]

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[6] MODELING AND SIMULATION OF A DEEP-ULTRAVIOLET ACID HARDENING RESIST [J].

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[8]

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[9]

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[10]

KRASNOPEROVA AA, 1994, P SOC PHOTO-OPT INS, V2194, P198, DOI 10.1117/12.175805

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