CAPACITANCE TRANSIENT ANALYSIS OF MOLECULAR-BEAM EPITAXIAL ETA-IN0.53GA0.47AS AND ETA-IN0.52AL0.48AS

被引：39

作者：

WHITNEY, PS

LEE, W

FONSTAD, CG

机构：

[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

[2] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 03期

关键词：

D O I：

10.1116/1.583753

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：796 / 799

页数：4

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