CHARGE COLLECTION CONTROL USING RETROGRADE WELL TESTED BY PROTON MICROPROBE IRRADIATION

被引：12

作者：

SAYAMA, H

KIMURA, H

OHNO, Y

SATOH, S

SONODA, K

KOTANI, N

TAKAI, M

机构：

[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN

[2] MITSUBISHI ELECTR CORP,ULSI LAB,ITAMI,HYOGO 664,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 12B期

关键词：

DYNAMIC RANDOM-ACCESS MEMORY; SOFT ERROR; NUCLEAR MICROPROBE; SOFT-ERROR MAPPING; ION-INDUCED CURRENT; CHARGE COLLECTION; HIGH-ENERGY ION-IMPLANTATION; RETROGRADE WELL; BURIED BARRIER LAYER;

D O I：

10.1143/JJAP.32.6287

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Soft error reduction by high-energy ion-implanted layers has been investigated by novel evaluation techniques using high-energy proton microprobes. A retrograde well formed by 160 and 700 keV boron ion implantation could completely suppress soft errors induced by the proton microprobes at 400 keV. The proton-induced current revealed the charge collection efficiency for the retrograde well structure. The collected charge for the retrograde well in the soft-error mapping was proved to be lower than the critical charge of the measured DRAMs (dynamic random-access memories). Complementary use of soft-etror mapping and ion-induced-current measurement could clarify well structures immune against soft errors.

引用

页码：6287 / 6290

页数：4

共 18 条

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