DEEP LEVELS INDUCED BY HIGH-ENERGY BORON ION-IMPLANTATION INTO P-SILICON

被引：19

作者：

SAYAMA, H

TAKAI, M

YUBA, Y

NAMBA, S

TSUKAMOTO, K

AKASAKA, Y

机构：

[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN

[2] MITSUBISHI ELECTR CO,LSI RES & DEV LAB,ITAMI,HYOGO 664,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 14期

关键词：

D O I：

10.1063/1.108450

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Defects induced by B+ implantation at 0.7 MeV into n+ p diodes were investigated using leakage current and deep level transient spectroscopy (DLTS). Leakage current increases drastically by implantation to a dose of more than 3 X 10(13) CM-2. DLTS spectra reveal two hole trap levels in the shallower region than the projected range of B+. One level at 265 K (E(v)+0.65 eV) is associated with point defects around dislocation kinks formed by B+ implantation to doses of more than 3 X 10(13) CM-2 . Another level at 290 K (E(v)+0.67 eV) is mainly responsible for the excess leakage current. This level was, for the first time, found in p-Si after high-energy ion implantation followed by annealing.

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页码：1682 / 1684

页数：3

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