VALENCE MANIPULATION AND HOMOJUNCTION DIODE FABRICATION OF CHALCOPYRITE STRUCTURE CU-IN-SE THIN-FILMS

被引：7

作者：

KOHIKI, S

NISHITANI, M

NEGAMI, T

WADA, T

机构：

[1] Central Research Laboratories, Matsushita Electric Industrial Co. Ltd., Moriguchi, Osaka

来源：

THIN SOLID FILMS | 1993年 / 226卷 / 01期

关键词：

D O I：

10.1016/0040-6090(93)90221-A

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The conduction type conversion from n to p type occurs in molecular beam deposited chalcopyrite structure Cu-In Se thin films by ion doping using the V family elements such as P, Sb. and Bi. Homojunction diodes can be fabricated by a P ion doping process. Ar ion implantation cannot change the conduction type, but can only enlarge the conductivity of as-implanted films as observed in the films implanted with V family elements. The V family elements' substitution of Se changes the valence states of the films.

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页码：149 / 155

页数：7

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