REVERSE CHARACTERISTICS OF RECTIFYING TE-SE-CD STRUCTURES

被引：6

作者：

CHAMPNESS, CH

ELAZAB, MI

机构：

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 07期

关键词：

D O I：

10.1016/0038-1101(81)90193-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：643 / 648

页数：6

共 11 条

[1]

Champness C. H., 1969, Proceedings of the International Symposium on the physics of selenium and tellurium, P349

[2] RECTIFYING TE-SE-CD STRUCTURES USING A SELENIUM SINGLE-CRYSTAL FILM [J].

CHAMPNESS, CH ;

GRIFFITHS, CH ;

SANG, H .

APPLIED PHYSICS LETTERS, 1968, 12 (09) :314-+

[3]

CHAMPNESS CH, 1971, CONDUCTION LOW MOBIL, P267

[4]

ELAZAB M, 1976, J ELECTRON MATER, V5, P381, DOI 10.1007/BF02663366

[5] ELECTRICAL FORMING ACTION IN TE-SE-CD STRUCTURES [J].

ELAZAB, MI ;

CHAMPNESS, CH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) :255-260

[6] CRYSTALLINE MORPHOLOGY AND ELECTRICAL PROPERTIES OF SELENIUM EPITAXILLY GROWN ON TELLURIUM [J].

FUKUDA, H ;

SAKAI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (05) :429-&

[7] A STUDY OF THE DEEP CARRIER TRAPS IN A TE-SE-CD RECTIFYING STRUCTURE [J].

HOUSIN, M ;

BASTIDE, G ;

SAGNES, G ;

ROUZEYRE, M ;

CHAMPNESS, CH ;

ELAZAB, MI .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4885-4888

[8] IONIZATION COEFFICIENT FOR HOLES IN POLYCRYSTALLINE SELENIUM [J].

LANYON, HPD ;

RICHARDSON, RE .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 7 (02) :421-+

[9]

PEREL VI, 1968, SOV PHYS SEMICOND+, V1, P1403

[10] EFFECTS OF DEEP IMPURITIES ON N+P JUNCTION REVERSE-BIASED SMALL-SIGNAL CAPACITANCE [J].

SCHIBLI, E ;

MILNES, AG .

SOLID-STATE ELECTRONICS, 1968, 11 (03) :323-+

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