3-5 COMPOUND PHOTOCATHODES - A NEW FAMILY OF PHOTOEMITTERS WITH GREATLY IMPROVED PERFORMANCE

被引:86
作者
BELL, RL
SPICER, WE
机构
来源
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1970年 / 58卷 / 11期
关键词
D O I
10.1109/PROC.1970.8019
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1788 / +
页数:1
相关论文
共 89 条
[41]   QUANTUM YIELD OF GAAS SEMITRANSPARENT PHOTOCATHODE [J].
LIU, YZ ;
MOLL, JL ;
SPICER, WE .
APPLIED PHYSICS LETTERS, 1970, 17 (02) :60-&
[42]   USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS [J].
MANASEVIT, HM ;
SIMPSON, WI .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) :1725-+
[43]   INFRARED PHOTOEMISSION FROM SILICON [J].
MARTINELLI, RU .
APPLIED PHYSICS LETTERS, 1970, 16 (07) :261-+
[44]  
MARTON L, 1969, ADVANCES ELECTRONI B, V28
[45]  
MARTON L, 1968, 4 P S PHOT EL IM DEV
[46]  
MARTON L, 1969, ADVANCES ELECTRONI A, V28
[47]   METAL-SEMICONDUCTOR SURFACE BARRIERS [J].
MEAD, CA .
SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1023-&
[48]  
MUNOZ E, 1970, APPL PHYS LETT, V16, P262, DOI 10.1063/1.1653188
[49]   GERMANIUM-DOPED GALLIUM ARSENIDE [J].
ROSZTOCZY, FE ;
ERMANIS, F ;
HAYASHI, I ;
SCHWARTZ, B .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) :264-+
[50]  
RUPPRECHT H, 1967, 1966 P INT S GAAS RE, P57