SELF-ALIGNED BEND WAVE-GUIDE (SBW) ALGAINP VISIBLE LASER-DIODE WITH SMALL BEAM ASTIGMATISM

被引：3

作者：

FURUYA, A

KITO, Y

FUKUSHIMA, T

SUGANO, M

SUDO, H

ANAYAMA, C

KONDO, M

TANAHASHI, T

机构：

[1] Fujitsu Laboratories Ltd., Atsugi

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1993年 / 29卷 / 06期

关键词：

D O I：

10.1109/3.234446

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The self-aligned bend waveguide (SBW) AlGaInP visible laser developed herein produces an index guiding waveguide structure by the bend of the double heterolayers and offers a very small beam astigmatism. The laser was fabricated using two-step metalorganic vapor phase epitaxy (MOVPE). Kink-free operation at 40 mW was achieved by modifying the device parameters. The measured beam astigmatism was maintained at less than 1 mum and did not vary with output power. The aging results under the condition of 50-degrees-C and 20 mW output power demonstrated the laser's reliability.

引用

收藏

页码：1869 / 1873

页数：5

相关论文

共 9 条

[1] SELECTIVE EMBEDDED GROWTH OF GAAS BY MOVPE [J].

ANAYAMA, C ;

TANAHASHI, T ;

NAKAJIMA, K .

JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) :65-68

[2] SMALL BEAM ASTIGMATISM OF ALGAINP VISIBLE LASER DIODE USING SELF-ALIGNED BEND WAVE-GUIDE [J].

FURUYA, A ;

KONDO, M ;

SUGANO, M ;

ANAYAMA, T ;

DOMEN, K ;

TANAHASHI, T ;

MIKAWA, T .

ELECTRONICS LETTERS, 1992, 28 (12) :1164-1165

[3] A STUDY OF THE ORIENTATION DEPENDENCE OF GA(AL)AS GROWTH BY MOVPE [J].

HERSEE, SD ;

BARBIER, E ;

BLONDEAU, R .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :310-320

[4] HIGH-TEMPERATURE (GREATER-THAN-150-DEGREES-C) AND LOW THRESHOLD CURRENT OPERATION OF ALGAINP/GAXIN1-XP STRAINED MULTIPLE QUANTUM-WELL VISIBLE LASER-DIODES [J].

KATSUYAMA, T ;

YOSHIDA, I ;

SHINKAI, J ;

HASHIMOTO, J ;

HAYASHI, H .

APPLIED PHYSICS LETTERS, 1991, 59 (26) :3351-3353

[5] ASTIGMATISM IN RIDGE-STRIPE INGAAIP LASER-DIODES [J].

NITTA, K ;

ITAYA, K ;

ISHIKAWA, M ;

WATANABE, Y ;

HATAKOSHI, G ;

UEMATSU, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11) :L2089-L2091

[6] HIGH-POWER (106 MW) CW OPERATION OF TRANSVERSE-MODE STABILIZED INGAAIP LASER-DIODES WITH STRAINED IN0.62GA0.38P ACTIVE LAYER [J].

NITTA, K ;

ITAYA, K ;

NISHIKAWA, Y ;

ISHIKAWA, M ;

OKAJIMA, M ;

HATAKOSHI, G .

ELECTRONICS LETTERS, 1991, 27 (18) :1660-1661

[7] A REAL-INDEX GUIDED INGAALP VISIBLE LASER DIODE WITH A SMALL BEAM ASTIGMATISM [J].

OKAJIMA, M ;

WATANABE, Y ;

NISHIKAWA, Y ;

ITAYA, K ;

HATAKOSHI, G ;

UEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1491-1495

[8] LOW-THRESHOLD 630 NM-BAND ALGAINP MULTIQUANTUM-WELL LASER-DIODES GROWN ON MISORIENTED SUBSTRATES [J].

SHONO, M ;

HAMADA, H ;

HONDA, S ;

HIROYAMA, R ;

YODOSHI, K ;

YAMAGUCHI, T .

ELECTRONICS LETTERS, 1992, 28 (10) :905-906

[9]

UMENO Y, 1992, ELECTRON LETT, V28, P860