LOW-THRESHOLD 630 NM-BAND ALGAINP MULTIQUANTUM-WELL LASER-DIODES GROWN ON MISORIENTED SUBSTRATES

被引：9

作者：

SHONO, M

HAMADA, H

HONDA, S

HIROYAMA, R

YODOSHI, K

YAMAGUCHI, T

机构：

[1] Semiconductor Research Center, SANYO Electric. Co., Ltd., Hirakata, Osaka, 573

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 10期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920574

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-threshold AlGaInP (lambda(L) = 635.6nm) multiquantum-well laser diodes have been successfully fabricated by MOCVD using (100) GaAs substrates with a misorientation of 7-degrees towards the (011) direction. A threshold current of 57mA at 20-degrees-C, the lowest value ever reported for 630nm-band AlGaInP lasers, has been obtained using transverse-mode stabilised laser diodes (stripe width: 5-mu-m, cavity length: 350-mu-m).

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收藏

页码：905 / 906

页数：2

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