THE EFFECT OF FE CONCENTRATION IN SUBSTRATES ON THE CHARACTERISTICS OF INP MISFETS

被引:6
作者
OKAMURA, M
HIROTA, Y
YAMAGUCHI, E
MIKAMI, O
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1987年 / 26卷 / 06期
关键词
D O I
10.1143/JJAP.26.976
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:976 / 977
页数:2
相关论文
共 9 条
[1]   DEPENDENCE OF MOS TRANSISTOR THRESHOLD VOLTAGE ON SUBSTRATE RESISTIVITY [J].
BROTHERTON, SD .
SOLID-STATE ELECTRONICS, 1967, 10 (06) :611-+
[2]   INFLUENCE OF INTERFACIAL STRUCTURE ON THE ELECTRONIC-PROPERTIES OF SIO2/INP MISFETS [J].
GEIB, KM ;
GOODNICK, SM ;
LIN, DY ;
GANN, RG ;
WILMSEN, CW ;
WAGER, JF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :516-521
[3]   TEMPERATURE-DEPENDENCE OF ELECTRON-MOBILITY FOR INVERSION-MODE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].
HIROTA, Y ;
OKAMURA, M ;
HISAKI, T ;
YAMAGUCHI, E .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (01) :277-283
[4]   IMPROVEMENT OF INP MISFET CHARACTERISTICS USING INFRARED LAMP ANNEALING [J].
HIROTA, Y ;
OKAMURA, M ;
HISAKI, T ;
MIKAMI, O .
ELECTRONICS LETTERS, 1985, 21 (16) :686-688
[5]   REDISTRIBUTION OF FE IN THERMALLY ANNEALED SEMI-INSULATING INP(FE) - DETERMINATION OF FE DIFFUSION-COEFFICIENT IN INP [J].
KAMADA, H ;
SHINOYAMA, S ;
KATSUI, A .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :2881-2884
[6]   CHANNEL MOBILITY ENHANCEMENT IN INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].
PANDE, KP ;
GUTIERREZ, D .
APPLIED PHYSICS LETTERS, 1985, 46 (04) :416-418
[7]  
TANAKA T, 1986, 1986 INT C SOL STAT, P631
[8]   HIGH MOBILITY INSULATED GATE TRANSISTORS ON INP [J].
TAYLOR, MJ ;
LILE, DL ;
NEDOLUHA, AK .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :522-526
[9]   THE ANODIC OXIDE OF INP AND ITS APPLICATION TO INP METAL-INSULATOR SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].
YAMAMOTO, A ;
SHIBUKAWA, A ;
YAMAGUCHI, M ;
UEMURA, C .
THIN SOLID FILMS, 1983, 103 (1-2) :95-105