TEMPERATURE-DEPENDENCE OF ELECTRON-MOBILITY FOR INVERSION-MODE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：4

作者：

HIROTA, Y

OKAMURA, M

HISAKI, T

YAMAGUCHI, E

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 01期

关键词：

D O I：

10.1063/1.338817

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：277 / 283

页数：7

共 23 条

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