REMOVAL OF THE SULFUR PASSIVATION OVERLAYER ON A (NH4)2SX-TREATED GAAS SURFACE BY VACUUM-ULTRAVIOLET IRRADIATION

被引：16

作者：

TAKAKUWA, Y

NIWANO, M

FUJITA, S

TAKEDA, Y

MIYAMOTO, N

机构：

[1] Research Institute of Electrical Communication, Tohoku University

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 15期

关键词：

D O I：

10.1063/1.105149

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of photon irradiation on the chemical state of a (NH4)2S(x)-treated GaAs surface have been investigated using photoemission and photon-stimulated desorption (PSD) spectroscopic techniques with synchrotron radiation (SR). It is shown that a sulfur-passivation overlayer on the (NH4)2S(x)-treated GaAs surface is readily removed by irradiating SR in the vacuum-ultraviolet (VUV) region onto the surface, suggesting the possibility of cleaning the sulfur-passivated GaAs surface by VUV irradiation. The dominant PSD ion product that desorbs from the sulfur-passivated GaAs surface during VUV irradiation is found to be H+. No desorption of sulfur ions is observed, which suggests that sulfur adatoms desorb as neutral species.

引用

页码：1635 / 1637

页数：3

共 18 条

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