OXIDE-FIELD DEPENDENCE OF ELECTRON INJECTION FROM SILICON INTO SILICON DIOXIDE

In this paper the problem of electron injection from silicon into silicon dioxide is tackled by means of a physical approach based on a simple model that provides good agreement with experimental data for MOS structures. The model implements the calculation of the electron energy distribution at the Si-SiO2 interface by means of an efficient nonlocal algorithm, thus making possible a consistent treatment of the tunneling of hot electrons across the oxide. The oxide-field dependence of electron injection is addressed and the relationship between barrier lowering and electron energy distributions is discussed.