ANNEALING BEHAVIOR OF STRESS IN SB-IMPLANTED SI

被引:4
作者
ITOH, N
NAKAU, T
MORIKAWA, Y
NAGAMI, K
机构
关键词
D O I
10.1143/JJAP.17.1003
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1003 / 1008
页数:6
相关论文
共 23 条
[1]   ENHANCED X-RAY DIFFRACTION FROM SUBSTRATE CRYSTALS CONTAINING DISCONTINUOUS SURFACE FILMS [J].
BLECH, IA ;
MEIERAN, ES .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) :2913-&
[2]   X-RAY INVESTIGATION OF LATTICE DEFORMATIONS IN SILICON INDUCED THROUGH HIGH-ENERGY ION IMPLANTATION [J].
BONSE, U ;
HART, M ;
SCHWUTTKE, GH .
PHYSICA STATUS SOLIDI, 1969, 33 (01) :361-+
[3]  
BUTURI O, 1975, J JAPAN SOC APPL PHY, V44, P311
[4]   REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J].
CSEPREGI, L ;
MAYER, JW ;
SIGMON, TW .
APPLIED PHYSICS LETTERS, 1976, 29 (02) :92-93
[5]   ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].
DAVIES, JA ;
DENHARTO.J ;
ERIKSSON, L ;
MAYER, JW .
CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) :4053-&
[6]   SENSITIVE TECHNIQUE FOR STUDYING ION-IMPLANTATION DAMAGE [J].
EERNISSE, EP .
APPLIED PHYSICS LETTERS, 1971, 18 (12) :581-&
[7]   ENHANCED DIFFUSION OF HIGH-TEMPERATURE ION-IMPLANTED ANTIMONY INTO SILICON [J].
GAMO, K ;
MASUDA, K ;
NAMBA, S .
APPLIED PHYSICS LETTERS, 1970, 17 (09) :391-+
[8]   CHANGES OF X-RAY TOPOGRAPHIC CONTRAST DUE TO ANNEALING OF BORON-IMPLANTED SILICON [J].
HUBRIG, WH ;
AULEYTNER, J ;
MACIASZEK, M .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 36 (01) :209-215
[9]  
IKEDA T, 1974, 6TH P C SOL STAT DEV
[10]   X-RAY TOPOGRAPHIC STUDIES OF STRAINS IN SILICON IMPLANTED WITH IN IONS AT HIGH DOSES [J].
ITOH, N ;
MORIKAWA, Y ;
NAKAU, T ;
KURODA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (12) :2069-2070