RESONANT-TUNNELING AND RESONANCE SPLITTING - THE INHERENT PROPERTIES OF SUPERLATTICES

被引:23
作者
LIU, XW
STAMP, AP
机构
[1] Department of Physics, University of Auckland, Auckland
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 03期
关键词
D O I
10.1103/PhysRevB.50.1588
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We show that the resonance and the resonance splitting effect in the transmission probability (TP) for electron transport through superlattices (SL's) of periodic potential structure with arbitrary profile in one dimension is inherent. The formalism presented provides an explicit description of the correlation between the resonance energy domains in TP and the miniband structure of the corresponding infinite SL. Examples demonstrating the dependence of the miniband structure and the resonance features on the SL material parameters are presented.
引用
收藏
页码:1588 / 1594
页数:7
相关论文
共 25 条
[1]   ANALYSIS OF BARRIER TRANSMISSION IN RESONANT TUNNELING DIODES [J].
ARAKI, K .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) :1059-1069
[2]   RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE [J].
CAPASSO, F ;
KIEHL, RA .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1366-1368
[3]   QUANTUM FUNCTIONAL DEVICES - RESONANT-TUNNELING TRANSISTORS, CIRCUITS WITH REDUCED COMPLEXITY, AND MULTIPLE-VALUED LOGIC [J].
CAPASSO, F ;
SEN, S ;
BELTRAM, F ;
LUNARDI, LM ;
VENGURLEKAR, AS ;
SMITH, PR ;
SHAH, NJ ;
MALIK, RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) :2065-2082
[4]   BAND-GAP ENGINEERING - FROM PHYSICS AND MATERIALS TO NEW SEMICONDUCTOR-DEVICES [J].
CAPASSO, F .
SCIENCE, 1987, 235 (4785) :172-176
[5]   QUANTUM ELECTRON DEVICES [J].
CAPASSO, F ;
DATTA, S .
PHYSICS TODAY, 1990, 43 (02) :74-82
[6]  
Capasso F., 1987, Physics and Applications of Quantum Wells and Superlattices. Proceedings of a NATO Advanced Study Institute, P377
[7]  
CAPASSO F, 1986, IEEE J QUANTUM ELECT, V22, P1583
[8]   RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].
CHANG, LL ;
ESAKI, L ;
TSU, R .
APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595
[9]   SEMICONDUCTOR QUANTUM HETEROSTRUCTURES [J].
CHANG, LL ;
ESAKI, L .
PHYSICS TODAY, 1992, 45 (10) :36-43
[10]  
CHANG LL, 1991, NATO ADV SCI I B-PHY, V285, P83