EFFECTS OF BULK-IMPURITY AND INTERFACE-CHARGE ON THE ELECTRON-MOBILITY IN MOSFETS

被引：7

作者：

GAMIZ, F

BANQUERI, J

CARCELLER, JE

LOPEZVILLANUEVA, JA

机构：

[1] Departamento de Electrónica y Technología de Computadores, Universidad de Granada, Facultad de Ciencias, 18071 Granada, Avd. Fuentenueva s/n

来源：

SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 03期

关键词：

D O I：

10.1016/0038-1101(94)00129-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of interface and bulk-impurity charges on electron mobility in a MOSFET are compared by using Monte Carlo simulation. It has been shown that the increase in bulk-impurity concentration causes a reduction of mobility at low electric fields, in two ways: (i) an increase of Coulomb interaction produced by an increase of charges in the bulk; and (ii) the reduction of screening caused by the loss of charge in inversion layer. Except for high-doping levels, the latter is the most significant cause of mobility degradation.

引用

页码：611 / 614

页数：4

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