A MOBILITY MODEL INCLUDING THE SCREENING EFFECT IN MOS INVERSION LAYER

被引：23

作者：

SHIRAHATA, M

KUSANO, H

KOTANI, N

KUSANOKI, S

AKASAKA, Y

机构：

[1] MITSUBISHI ELECTR CO,CTR ASIC DESIGN,ITAMI,HYOGO 664,JAPAN

[2] MITSUBISHI ELECTR CO,SIMULAT GRP,ITAMI,HYOGO 664,JAPAN

[3] MITSUBISHI ELECTR CO,DEPT ADV DESIGN TECHNOL,ITAMI,HYOGO 664,JAPAN

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1992年 / 11卷 / 09期

关键词：

D O I：

10.1109/43.159997

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We propose a new mobility model for MOSFET device simulation. Our model is the first one that is not only applicable to both inversion layer and source/drain high concentration regions of a MOSFET but also takes into account the screening effect in the inversion layer. The model also includes an improved normal-field dependence for thin gate oxide MOSFET's. The low parallel electric field mobility is estimated by adding mobilities due to donor scattering, acceptor scattering and lattice scattering using Matthiesen's rule. Both mobilities due to donor and acceptor scattering include screening effect of electrons. The mobility due to lattice scattering is formed as a function of normal electric field E(n), including strong dependence term of E(n), to express surface roughness scattering. Calculation results of the device simulation using our mobility model show good agreement with the experimental data for various channel dopings.

引用

页码：1114 / 1119

页数：6

共 18 条

[1] ELECTRON-MOBILITY EMPIRICALLY RELATED TO PHOSPHORUS CONCENTRATION IN SILICON [J].