A COMPARISON OF THE MEASUREMENT OF ION DAMAGE IN SILICON SURFACES USING DIFFERENTIAL REFLECTANCE AND SPECTROSCOPIC ELLIPSOMETRY

被引：22

作者：

BURNS, TM ^{[1
]}

CHONGSAWANGVIROD, S ^{[1
]}

ANDREWS, JW ^{[1
]}

IRENE, EA ^{[1
]}

MCGUIRE, G ^{[1
]}

CHEVACHAROEUKUL, S ^{[1
]}

机构：

[1] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 01期

关键词：

D O I：

10.1116/1.585788

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Differential reflectance (DR) spectroscopy has recently been reported to be effective in measuring the damage imparted to a Si surface by ions beams. Spectroscopic ellipsometry (SE) has been used extensively for this measurement. The present study compares DR and SE, "head-to-head," from both high energy ion implanted samples (60-180 keV) and low energy (0.1-1.5 keV) ion exposures. In most cases DR and SE yield the same information, but SE has a greater analytical capability at the present time. DR is shown to be quite useful for buried layers and being simpler in terms of hardware requirements, perhaps more suitable for process monitoring.

引用

页码：41 / 49

页数：9

共 26 条

[1]

ANDREWS J, UNPUB

[2]

[Anonymous], 1985, HDB OPTICAL CONSTANT

[3] DIELECTRIC FUNCTION AND SURFACE MICROROUGHNESS MEASUREMENTS OF INSB BY SPECTROSCOPIC ELLIPSOMETRY [J].