INSITU SPATIALLY RESOLVED SURFACE CHARACTERIZATION OF REALISTIC SEMICONDUCTOR STRUCTURE AFTER REACTIVE ION ETCHING PROCESS

[1] INSITU AUGER-ELECTRON SPECTROSCOPY OF SI AND SIO2 SURFACES PLASMA ETCHED IN CF4-H2 GLOW-DISCHARGES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5210 - 5213

[2] PARAMETER AND REACTOR DEPENDENCE OF SELECTIVE OXIDE RIE IN CF4+H2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2282 - 2287

[3] EVANS S, 1977, HDB XRAY ULTRAVIOLET, P121

[4] Fadley C. S., 1976, Progress in Solid State Chemistry, V11, P265, DOI 10.1016/0079-6786(76)90013-3

[5] ANGLE-RESOLVED X-RAY PHOTOELECTRON-SPECTROSCOPY [J]. PROGRESS IN SURFACE SCIENCE, 1984, 16 (03) : 275 - 388

[6] MCCULLUM JC, 1983, APPL PHYS LETT, V42, P827

[7] ANISOTROPIC-PLASMA ETCHING OF POLYSILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (03): : 721 - 730

[8] QUANTITATIVE IMAGE ACQUISITION-SYSTEM FOR ION MICROSCOPY BASED ON THE RESISTIVE ANODE ENCODER [J]. ANALYTICAL CHEMISTRY, 1983, 55 (03) : 574 - 578

[9] SILICON ETCHING MECHANISMS IN A CF4/H2 GLOW-DISCHARGE [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) : 662 - 672

[10] NEAR-SURFACE DAMAGE AND CONTAMINATION AFTER CF4-H2 REACTIVE ION ETCHING OF SI [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : 1441 - 1447

[1] INSITU AUGER-ELECTRON SPECTROSCOPY OF SI AND SIO2 SURFACES PLASMA ETCHED IN CF4-H2 GLOW-DISCHARGES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5210 - 5213

[2] PARAMETER AND REACTOR DEPENDENCE OF SELECTIVE OXIDE RIE IN CF4+H2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2282 - 2287

[3] EVANS S, 1977, HDB XRAY ULTRAVIOLET, P121

[4] Fadley C. S., 1976, Progress in Solid State Chemistry, V11, P265, DOI 10.1016/0079-6786(76)90013-3

[5] ANGLE-RESOLVED X-RAY PHOTOELECTRON-SPECTROSCOPY [J]. PROGRESS IN SURFACE SCIENCE, 1984, 16 (03) : 275 - 388

[6] MCCULLUM JC, 1983, APPL PHYS LETT, V42, P827

[7] ANISOTROPIC-PLASMA ETCHING OF POLYSILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (03): : 721 - 730

[8] QUANTITATIVE IMAGE ACQUISITION-SYSTEM FOR ION MICROSCOPY BASED ON THE RESISTIVE ANODE ENCODER [J]. ANALYTICAL CHEMISTRY, 1983, 55 (03) : 574 - 578

[9] SILICON ETCHING MECHANISMS IN A CF4/H2 GLOW-DISCHARGE [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) : 662 - 672

[10] NEAR-SURFACE DAMAGE AND CONTAMINATION AFTER CF4-H2 REACTIVE ION ETCHING OF SI [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : 1441 - 1447