SILICON ETCHING MECHANISMS IN A CF4/H2 GLOW-DISCHARGE

[1] Chapman B., 1980, GLOW DISCHARGE PROCE

[2] Chu W. K., 1978, BACKSCATTERING SPECT

[3] Coburn J., 1982, AM VACUUM SOC MONOGR

[4] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540

[5] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 391 - 403

[6] INSITU AUGER-ELECTRON SPECTROSCOPY OF SI AND SIO2 SURFACES PLASMA ETCHED IN CF4-H2 GLOW-DISCHARGES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5210 - 5213

[7] OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3134 - 3136

[8] FORMATION OF A SILICON-CARBIDE LAYER DURING CF4/H2 DRY ETCHING OF SI [J]. APPLIED PHYSICS LETTERS, 1985, 47 (06) : 604 - 606

[9] MECHANISMS OF POLYMERIZATION IN DISCHARGES OF FLUOROCARBONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06): : 2627 - 2628

[10] REACTIVE ION ETCHING FOR VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) : 1315 - 1319

[1] Chapman B., 1980, GLOW DISCHARGE PROCE

[2] Chu W. K., 1978, BACKSCATTERING SPECT

[3] Coburn J., 1982, AM VACUUM SOC MONOGR

[4] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540

[5] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 391 - 403

[6] INSITU AUGER-ELECTRON SPECTROSCOPY OF SI AND SIO2 SURFACES PLASMA ETCHED IN CF4-H2 GLOW-DISCHARGES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5210 - 5213

[7] OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3134 - 3136

[8] FORMATION OF A SILICON-CARBIDE LAYER DURING CF4/H2 DRY ETCHING OF SI [J]. APPLIED PHYSICS LETTERS, 1985, 47 (06) : 604 - 606

[9] MECHANISMS OF POLYMERIZATION IN DISCHARGES OF FLUOROCARBONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06): : 2627 - 2628

[10] REACTIVE ION ETCHING FOR VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) : 1315 - 1319