N-SIXC1-X/P-SI DIODE FABRICATED USING SILANE, 1,1,1-TRICHLOROETHANE, AND ARSINE AT LOW-TEMPERATURES

被引：6

作者：

HEBERT, F

机构：

[1] Advanced Bipolar Products, AVANTEK, Inc., Newark

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 09期

关键词：

D O I：

10.1109/55.116923

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel method for depositing Si(x)Cl1-x alloys on silicon, based on the silane and 1,1,1-trichloroethane gas system, has been investigated in an inexpensive hot-wall horizontal LPCVD reactor. Temperatures in the range of 650 to 800-degrees-C and in-situ doping using arsine were used successfully. The film characteristics were evaluated using electron spectroscopy for chemical analysis (ESCA)(XPS), Fourier transform infrared spectroscopy (FTIR), and optical absorption. N+-P+ heterojunctions with low reverse leakage current and a forward-bias ideality factor of 1.55 were successfully fabricated.

引用

页码：477 / 479

页数：3

共 17 条

[1] EPITAXIAL-GROWTH OF BETA-SIC ON SI BY LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION
CHAUDHRY, MI
WRIGHT, RL
[J]. JOURNAL OF MATERIALS RESEARCH, 1990, 5 (08) : 1595 - 1598
[2] EDGELL M, 1990, ESCA XPS MEASUREMENT
[3] HETEROEPITAXIAL BETA-SIC ON SI
FURUMURA, Y
DOKI, M
MIENO, F
ESHITA, T
SUZUKI, T
MAEDA, M
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (05) : 1255 - 1260
[4] USE OF 111-TRICHLOROETHANE AS AN OPTIMIZED ADDITIVE TO IMPROVE SILICON THERMAL-OXIDATION TECHNOLOGY
JANSSENS, EJ
DECLERCK, GJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) : 1696 - 1703
[5] KAMINS T, 1988, POLYCRYSTALLINE SILI, P32
[6] PLASMA-ETCHING OF BETA-SIC
KELNER, G
BINARI, SC
KLEIN, PH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (01) : 253 - 254
[7] PROPERTIES OF HIGH HEAT-RESISTANCE MU-C-SICX-H EMITTER SILICON HBTS
KUWAGAKI, M
IMAI, K
AMEMIYA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (05): : L754 - L756
[8] LOW-TEMPERATURE AND SELECTIVE GROWTH OF BETA-SIC USING THE SIH2CL2 C3H8 H2 HCL-GAS SYSTEM
OHSHITA, Y
ISHITANI, A
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (09) : 4535 - 4537
[9] REACTIVE ION ETCHING OF MONOCRYSTALLINE, POLYCRYSTALLINE, AND AMORPHOUS-SILICON CARBIDE IN CF4/O2 MIXTURES
PADIYATH, R
WRIGHT, RL
CHAUDHRY, MI
BABU, SV
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (10) : 1053 - 1055
[10] AMORPHOUS CRYSTALLINE HETEROSTRUCTURE AS A NOVEL-APPROACH TO FABRICATION OF A SOLAR-CELL
RAHMAN, MM
FURUKAWA, S
[J]. ELECTRONICS LETTERS, 1984, 20 (02) : 57 - 58

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