THE EFFECT OF GROWTH TEMPERATURE, DELTA-DOPING AND BARRIER COMPOSITION ON MOBILITIES IN SHALLOW ALGAAS-GAAS 2-DIMENSIONAL ELECTRON GASES

被引：6

作者：

HOLLAND, MC ^{[1
]}

SKURAS, E ^{[1
]}

DAVIES, JH ^{[1
]}

LARKIN, IA ^{[1
]}

LONG, AR ^{[1
]}

STANLEY, CR ^{[1
]}

机构：

[1] UNIV GLASGOW,DEPT PHYS & ASTRON,GLASGOW G12 8QQ,LANARK,SCOTLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)80132-V

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A series of two-dimensional electron gas (2DEG) structures have been grown with the 2DEG only 28 nm from the surface. The effects of growth temperature and delta-doping density have been investigated, and a comparison has been made between AlAs and Al0.3Ga0.7As barriers. A mobility of 330,000 cm(2) V-1 s(-1) at 4 K has been measured for a shallow 2DEG with an Al0.3Ga0.7As barrier, which is the highest reported for such a structure.

引用

页码：1215 / 1219

页数：5

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