DIFFUSION AND DRIFT OF SI DOPANTS IN DELTA-DOPED N-TYPE ALXGA1-XAS

被引：60

作者：

SCHUBERT, EF

TU, CW

KOPF, RF

KUO, JM

LUNARDI, LM

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 25期

关键词：

D O I：

10.1063/1.101059

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2592 / 2594

页数：3

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[1] EXPERIMENTAL AND THEORETICAL MOBILITY OF ELECTRONS IN DELTA-DOPED GAAS
GILLMAN, G
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[J]. APPLIED PHYSICS LETTERS, 1988, 52 (12) : 972 - 974
[2] HEADRICK RL, UNPUB
[3] NONRANDOM DOPING AND ELASTIC-SCATTERING OF CARRIERS IN SEMICONDUCTORS
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[J]. APPLIED PHYSICS LETTERS, 1989, 54 (10) : 940 - 942
[4] Pfeiffer L. N., UNPUB
[5] SI ATOMIC-PLANAR-DOPING IN GAAS MADE BY MOLECULAR-BEAM EPITAXY
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08): : L602 - L604
[6] DOPANT DISTRIBUTION FOR MAXIMUM CARRIER MOBILITY IN SELECTIVELY DOPED AL0.30GA0.70AS/GAAS HETEROSTRUCTURES
SCHUBERT, EF
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[J]. APPLIED PHYSICS LETTERS, 1989, 54 (14) : 1350 - 1352
[7] ELECTRON-MOBILITY ENHANCEMENT AND ELECTRON-CONCENTRATION ENHANCEMENT IN DELTA-DOPED N-GAAS AT T=300K
SCHUBERT, EF
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TSANG, WT
[J]. SOLID STATE COMMUNICATIONS, 1987, 63 (07) : 591 - 594
[8] SELECTIVELY DELTA-DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURES WITH HIGH TWO-DIMENSIONAL ELECTRON-GAS CONCENTRATIONS N2DEG-GREATER-THAN-OR-EQUAL-TO-1.5X10(12) CM-2 FOR FIELD-EFFECT TRANSISTORS
SCHUBERT, EF
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TSANG, WT
TIMP, GL
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (15) : 1170 - 1172
[9] SPATIAL LOCALIZATION OF IMPURITIES IN DELTA-DOPED GAAS
SCHUBERT, EF
STARK, JB
ULLRICH, B
CUNNINGHAM, JE
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (18) : 1508 - 1510
[10] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON
SHOCKLEY, W
[J]. SOLID-STATE ELECTRONICS, 1961, 2 (01) : 35 - +