HIGH-SPEED INP/INGAAS HBTS OPERATED AT SUBMILLIAMPERE COLLECTOR CURRENTS

被引：10

作者：

NAKAJIMA, H

KURISHIMA, K

YAMAHATA, S

KOBAYASHI, T

MATSUOKA, Y

机构：

[1] NTT LSI Laboratories, Kanagawa, 243-01, 3-1, Morinosato Wakamiya, Atsugishi

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 21期

关键词：

HETEROJUNCTION BIPOLAR TRANSISTORS; CHEMICAL VAPOR DEPOSITION;

D O I：

10.1049/el:19931256

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Extremely small-emitter InP/InGaAs heterojunction bipolar transistors have been fabricated by using a selfalignment technique on MOCVD-grown material. Fabricated devices with a 1 x 2 mum2 emitter electrode showed f(T) exceeding 100GHz at submilliampere collector currents of I(C) >0.6mA. A maximum f(T) of 163GHz at I(C) = 2.3mA ranks with the f(T) = 176GHz achieved by a simultaneously fabricated 2 x 20 mum2 transistor at I(C) = 45mA.

引用

页码：1887 / 1888

页数：2

共 8 条

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