CHANNELING CONTRAST ANALYSIS OF GAAS SIDE-WALLS FABRICATED BY LASER WET CHEMICAL ETCHING

被引：9

作者：

TAKAI, M ^{[1
]}

HARA, S ^{[1
]}

LEE, C ^{[1
]}

KINOMURA, A ^{[1
]}

LOHNER, T ^{[1
]}

机构：

[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 85卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(94)95917-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A nuclear microprobe with 400 keV helium ions has been used to characterize GaAs layers locally etched by focused laser irradiation in a wet chemical solution. A comparison of crystallinity between the side-walls and cleaved surfaces of etched grooves has been made using channeling contrast analysis. Degradation of surface crystallinity in channeling contrast mapping was observed at the side-walls etched by laser chemical processing at higher laser powers, which was found to be due to surface roughness arising from etching selectivity for GaAs at surface regions.

引用

页码：752 / 755

页数：4

共 12 条

[1] A 500 KEV ION ACCELERATOR WITH 2 TYPES OF ION-SOURCE [J].

AGAWA, Y ;

TAKAI, M ;

NAMBA, S ;

UCHIYAMA, T ;

FUKUI, R ;

YAMAKAWA, H .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4) :502-505

[2]

Ehrlich D.J., 1989, LASER MICROFABRICATI

[3] DAMAGE DURING MICROCHANNELING ANALYSIS USING 400 KEV HELIUM ION MICROPROBE [J].

HIRAI, K ;

TAKAI, M ;

KINOMURA, A ;

NAMBA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (5B) :L649-L651

[4] LASER-INDUCED TRENCH ETCHING OF GAAS IN AQUEOUS KOH SOLUTION [J].

LEE, C ;

TAKAI, M ;

YADA, T ;

KATO, K ;

NAMBA, S .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1990, 51 (04) :340-343

[5] COMPARISON OF LASER-INDUCED ETCHING BEHAVIOR OF III-V-COMPOUND SEMICONDUCTORS [J].

LEE, C ;

SAYAMA, H ;

TAKAI, M .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 56 (04) :343-348

[6]

MACCALLUM JC, 1983, APPL PHYS LETT, V42, P827

[7] CHANNELING CONTRAST MICROSCOPY - APPLICATION TO SEMICONDUCTOR STRUCTURES [J].

MCCALLUM, JC ;

MCKENZIE, CD ;

LUCAS, MA ;

ROSSITER, KG ;

SHORT, KT ;

WILLIAMS, JS .

APPLIED PHYSICS LETTERS, 1983, 42 (09) :827-829

[8]

PREWETT PD, 1991, FOCUSED ION BEAMS LI

[9]

RYSSEL H, 1986, ION IMPLANTATION, P201

[10] DATA-PROCESSING FOR RBS TOMOGRAPHY ANALYSIS [J].

TAKAI, M ;

KATAYAMA, Y ;

KINOMURA, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 77 (1-4) :229-233

← 1 2 →