LASER-INDUCED TRENCH ETCHING OF GAAS IN AQUEOUS KOH SOLUTION

被引：12

作者：

LEE, C

TAKAI, M

YADA, T

KATO, K

NAMBA, S

机构：

[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN

[2] GLORY LTD,HIMEJI,HYOGO 670,JAPAN

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1990年 / 51卷 / 04期

关键词：

81.40; 82.65;

D O I：

10.1007/BF00324316

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Maskless etching of n-type GaAs in a KOH aqueous solution by irradiation of an argonion laser has been investigated to obtain high etching rates and aspect-ratios of etched grooves. High etching rates of up to 805 μm/s and an aspect ratio of 8 have been achieved by a single scan of a laser beam. Microprobe photoluminescence (PL), Raman scattering, and Auger electron spectroscopy (AES) measurements were carried out on the trench surface to characterize damage induced by laser wet etching. © 1990 Springer-Verlag.

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页码：340 / 343

页数：4

相关论文

共 18 条

[1] LASER ETCHING OF 0.4 MU-M STRUCTURES IN CDTE BY DYNAMIC LIGHT GUIDING [J].

ARNONE, C ;

ROTHSCHILD, M ;

EHRLICH, DJ .

APPLIED PHYSICS LETTERS, 1986, 48 (11) :736-738

[2] PHOTON-ASSISTED DRY ETCHING OF GAAS [J].

BREWER, P ;

HALLE, S ;

OSGOOD, RM .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :475-477

[3] LASER-INDUCED MICROSCOPIC ETCHING OF GAAS AND INP [J].

EHRLICH, DJ ;

OSGOOD, RM ;

DEUTSCH, TF .

APPLIED PHYSICS LETTERS, 1980, 36 (08) :698-700

[4] LASER CHEMICAL TECHNIQUE FOR RAPID DIRECT WRITING OF SURFACE RELIEF IN SILICON [J].

EHRLICH, DJ ;

OSGOOD, RM ;

DEUTSCH, TF .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :1018-1020

[5] LASER-PHOTOINDUCED ETCHING OF SEMICONDUCTORS AND METALS [J].

HAYNES, RW ;

METZE, GM ;

KREISMANIS, VG ;

EASTMAN, LF .

APPLIED PHYSICS LETTERS, 1980, 37 (04) :344-346

[6] LASER-INDUCED ETCHING OF MN-ZN FERRITE AND ITS APPLICATION [J].

LU, YF ;

TAKAI, M ;

NAGATOMO, S ;

MINAMISONO, T ;

NAMBA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (10) :2151-2156

[7]

LU YF, 1988, APPL PHYS A, V47, P319

[8] WAVE-GUIDING EFFECTS IN LASER-INDUCED AQUEOUS ETCHING OF SEMICONDUCTORS [J].

PODLESNIK, DV ;

GILGEN, HH ;

OSGOOD, RM .

APPLIED PHYSICS LETTERS, 1986, 48 (07) :496-498

[9] DEEP-ULTRAVIOLET INDUCED WET ETCHING OF GAAS [J].

PODLESNIK, DV ;

GILGEN, HH ;

OSGOOD, RM .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :563-565

[10] LOCAL TEMPERATURE RISE DURING LASER-INDUCED ETCHING OF GALLIUM-ARSENIDE IN SICL4 ATMOSPHERE [J].

TAKAI, M ;

NAKAI, H ;

TSUCHIMOTO, J ;

GAMO, K ;

NAMBA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (09) :L705-L708