IMPACT IONIZATION COEFFICIENTS IN (100) GAINP

被引：27

作者：

FU, SL

CHIN, TP

HO, MC

TU, CW

ASBECK, PM

机构：

[1] Department of Electrical and Computer Engineering, University of California, La Jolla, California 92093, San Diego

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 25期

关键词：

ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; GALLIUM PHOSPHIDES; IMPACT PHENOMENA; INDIUM PHOSPHIDES; IONIZATION; PâN JUNCTIONS;

D O I：

10.1063/1.113779

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron and hole impact ionization coefficients in (100)Ga0.5In0.5P have been measured by photomultiplication measurements. The ratio of hole to electron ionization coefficients, Î²/Î±, is shown to decrease from 2 to 1 when the electric field is increased from 3.5Ã105 to 6.5Ã105 V/cm. As confirmation, breakdown voltages were measured for several p+ânâân+ diodes with various concentrations in the nâ region. The values observed showed good agreement with those calculated from the ionization coefficients. Typical breakdown voltages are on the order of 1.6 times higher than those expected for GaAs. © 1995, American Institute of Physics. All rights reserved.

引用

页码：3507 / 3509

页数：3

共 11 条

[1] THE DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN (100) GALLIUM-ARSENIDE USING AVALANCHE NOISE AND PHOTOCURRENT MULTIPLICATION MEASUREMENTS [J].

BULMAN, GE ;

ROBBINS, VM ;

STILLMAN, GE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2454-2466

[2] ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN INP DETERMINED BY PHOTOMULTIPLICATION MEASUREMENTS [J].

COOK, LW ;

BULMAN, GE ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1982, 40 (07) :589-591

[3] COMPARISON OF IN0.5GA0.5P/GAAS SINGLE-HETEROJUNCTION AND DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A CARBON-DOPED BASE [J].

HANSON, AW ;

STOCKMAN, SA ;

STILLMAN, GE .

IEEE ELECTRON DEVICE LETTERS, 1993, 14 (01) :25-28

[4] CONDUCTION-BAND DISCONTINUITY IN INGAP/GAAS MEASURED USING BOTH CURRENT-VOLTAGE AND PHOTOEMISSION METHODS [J].

LEE, TW ;

HOUSTON, PA ;

KUMAR, R ;

YANG, XF ;

HILL, G ;

HOPKINSON, M ;

CLAXTON, PA .

APPLIED PHYSICS LETTERS, 1992, 60 (04) :474-476

[5] ELECTRON SATURATION VELOCITY IN GA0.5INP0.5INP0.5P MEASURED IN A GALNP/GAAS/GALNP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR [J].

LIU, W ;

HENDERSON, T ;

FAN, SK .

ELECTRONICS LETTERS, 1993, 29 (21) :1885-1887

[6] PLASMA AND WET CHEMICAL ETCHING OF IN0.5GA0.5P [J].

LOTHIAN, JR ;

KUO, JM ;

REN, F ;

PEARTON, SJ .

JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (04) :441-445

[7] ULTRALOW RECOMBINATION VELOCITY AT GA0.5IN0.5P/GAAS HETEROINTERFACES [J].

OLSON, JM ;

AHRENKIEL, RK ;

DUNLAVY, DJ ;

KEYES, B ;

KIBBLER, AE .

APPLIED PHYSICS LETTERS, 1989, 55 (12) :1208-1210

[8] CHARACTERIZATION OF GALNP/GAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH DIFFERENT COLLECTOR DESIGNS [J].

SONG, JI ;

CANEAU, C ;

HONG, WP ;

CHOUGH, KB .

ELECTRONICS LETTERS, 1993, 29 (21) :1881-1883

[9]

Stillman G.E., 1977, SEMICONDUCTORS SEMIM, V12, P291

[10]

Sze S.M, 1981, PHYS SEMICONDUCTOR D, V2nd, P150

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