OMVPE GROWTH OF ALGAINP GAXIN1-XP STRAINED QUANTUM-WELL STRUCTURES AND THEIR APPLICATIONS TO VISIBLE LASER-DIODES

AlGaInP/Ga0.43In0.57P strained single quantum well (SSQW) structures were grown by low pressure (60 Torr) OMVPE at various growth temperature on Si-doped GaAs substrates. A large blue shift of FL spectra and a reduction of spectrum linewidths were observed with increasing growth temperature and the dependence of PL peak energy on the substrate off angle completely disappeared at 780-degrees-C. It was found that the degree of sub-lattice ordering in the SSQW structure can be controlled by growth temperature with preserving a high crystalline quality. A separate confinement heterostructure AlGaInP/Ga0.43In0.57P strained multiple quantum well laser was grown on (100) Si-doped GaAs at 740-degrees-C. Continuous wave operation was observed up to 160-degrees-C, the highest operating temperature ever reported in the lasers operating in the visible wavelength. The characteristic temperature was 160 K between 25 and 50-degrees-C. The emission wavelength and the threshold current density for a 80 x 940 mum device at 25-degrees-C were 692 nm and 410 A/cm2, respectively.