CHARACTERIZATION OF NEGATIVE ELECTRON-BEAM RESISTS BASED UPON GENERALIZED GEL FORMATION THEORY

被引：6

作者：

KOBAYASHI, T

ARAI, E

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 07期

关键词：

D O I：

10.1063/1.329318

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4785 / 4791

页数：7

相关论文

共 11 条

[1] GEL FORMATION IN NEGATIVE ELECTRON RESISTS
ATODA, N
KAWAKATSU, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (10) : 1519 - 1524
[2] EXPOSURE OF PHOTORESISTS - ELECTRON BEAM EXPOSURE OF NEGATIVE PHOTORESISTS
BROYDE, B
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (09) : 1241 - &
[3] A THEORY OF NETWORK FORMATION IN IRRADIATED POLYESTERS
CHARLESBY, A
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 241 (1227): : 495 - 507
[4] FUNDAMENTAL ASPECTS OF ELECTRON-BEAM LITHOGRAPHY .1. DEPTH-DOSE RESPONSE OF POLYMERIC ELECTRON-BEAM RESISTS
HEIDENREICH, RD
THOMPSON, LF
FEIT, ED
MELLIARS.CM
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4039 - 4047
[5] EPOXIDE-CONTAINING POLYMERS AS HIGHLY SENSITIVE ELECTRON-BEAM RESISTS
HIRAI, T
HATANO, Y
NONOGAKI, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 669 - &
[6] CHLOROMETHYLATED POLYSTYRENE AS A DRY ETCHING-RESISTANT NEGATIVE RESIST FOR SUB-MICRON TECHNOLOGY
IMAMURA, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) : 1628 - 1630
[7] POLYMERIC ELECTRON BEAM RESISTS
KU, HY
SCALA, LC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) : 980 - &
[8] NEW HIGH SENSITIVE ELECTRON RESIST MATERIALS
PAAL, G
STRAHLE, UD
KIELHORN, G
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) : 1714 - 1716
[9] PGMA AS A HIGH-RESOLUTION, HIGH-SENSITIVITY NEGATIVE ELECTRON-BEAM RESIST
TANIGUCHI, Y
HATANO, Y
SHIRAISHI, H
HORIGOME, S
NONOGAKI, S
NARAOKA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (06) : 1143 - 1148
[10] FUNDAMENTAL ASPECTS OF ELECTRON-BEAM LITHOGRAPHY .2. LOW-VOLTAGE EXPOSURE OF NEGATIVE RESISTS
THOMPSON, LF
FEIT, ED
MELLIARS.CM
HEIDENREICH, RD
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4048 - 4051