TECHNOLOGY AND RELIABILITY OF THERMAL SIO2 LAYERS AS USED FOR PASSIVATING SILICON POWER DEVICES

被引：7

作者：

BLAHA, RE

FAHRNER, WR

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1978年 / 50卷 / 02期

关键词：

D O I：

10.1002/pssa.2210500224

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：551 / 562

页数：12

共 10 条

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[2]

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[3]

BORDERS JA, 1971, 2 INT C ION IMPL SEM, P241

[4] FIELD DISTRIBUTION NEAR-SURFACE OF BEVELED P-N-JUNCTIONS IN HIGH-VOLTAGE DEVICES [J].

CORNU, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (04) :347-352

[5] PROPERTIES OF A SINGLE-LEVEL SURFACE STATE INDUCED BY BE IMPLANTATION INTO SI-SIO2 INTERFACES [J].

FAHRNER, W ;

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[6]

FAHRNER W, 1974, J ELECTROCHEM SOC, V121, P748

[7] APPLICATION OF THERMAL-NEUTRON IRRADIATION FOR LARGE-SCALE PRODUCTION OF HOMOGENEOUS PHOSPHORUS DOPING OF FLOATZONE SILICON [J].

JANUS, HM ;

MALMROS, O .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (08) :797-802

[8]

NEIDIG A, COMMUNICATION

[9] IMPURITY ATOM DISTRIBUTION RESULTING FROM THERMAL REDISTRIBUTION OF AN IMPLANTED IMPURITY SOURCE [J].

PERLOFF, DS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (08) :1135-1138

[10] CONTROL OF POSITIVE SURFACE CHARGE IN SI-SIO2 INTERFACES BY USE OF IMPLANTED CS IONS [J].

SIXT, G ;

GOETZBERGER, A .

APPLIED PHYSICS LETTERS, 1971, 19 (11) :478-+

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