RAMAN-SCATTERING OF INGAAS/INP GROWN BY UNIFORM RADIAL FLOW EPITAXY

被引：36

作者：

FENG, ZC ^{[1
]}

ALLERMAN, AA ^{[1
]}

BARNES, PA ^{[1
]}

PERKOWITZ, S ^{[1
]}

机构：

[1] AUBURN UNIV,DEPT PHYS,AUBURN,AL 36849

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 15期

关键词：

D O I：

10.1063/1.107187

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Uniform radial flow epitaxy, a novel growth technique, has been used to grow InGaAs films on InP. Epitaxial layers above and below the critical thickness for the onset of slip were grown. We used Raman spectroscopy to characterize the quality of epitaxial layers, determine alloy composition, and measure the strain. Raman spectra from both pseudomorphic (strained) and relaxed (unstrained) InGaAs films were obtained at 300 and 80 K. The difference in the frequencies of their GaAs-like longitudinal optical phonons was used to calculate stress for the strained InGaAs/InP, leading to a direct formula for the evaluation of the layer stress.

引用

页码：1848 / 1850

页数：3

共 22 条

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