EFFECTS OF UNIAXIAL-STRESS ON THE CYCLOTRON-RESONANCE IN INVERSION LAYERS ON SI(100)

被引：24

作者：

STALLHOFER, P ^{[1
]}

KOTTHAUS, JP ^{[1
]}

ABSTREITER, G ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,F-38042 GRENOBLE,FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 32卷 / 08期

关键词：

D O I：

10.1016/0038-1098(79)90721-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In electron inversion layers on Si (100) MOS capacitors uniaxial stress can cause simultaneous occupation of the two non-equivalent subbands E0 and E0'. Two distinct cyclotron resonance signals are observed and can be used to determine the effective masses and the relative occupation in the two subbands and their dependence on stress and electron density. © 1979.

引用

页码：655 / 658

页数：4

共 15 条

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[7] TEMPERATURE-DEPENDENT CYCLOTRON MASS OF INVERSION-LAYER ELECTRONS IN SI
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[8] EFFECTIVE-MASS VARIATION IN SILICON INVERSION LAYERS
OVERHAUSER, AW
[J]. PHYSICAL REVIEW B, 1978, 18 (06): : 2884 - 2887
[9] SURFACE CYCLOTRON-RESONANCE IN SI UNDER UNIAXIAL STRESS
STALLHOFER, P
KOTTHAUS, JP
KOCH, JF
[J]. SOLID STATE COMMUNICATIONS, 1976, 20 (05) : 519 - 522
[10] EFFECT OF TEMPERATURE AND STRESS ON SURFACE CYCLOTRON-RESONANCE IN (100)SI
STALLHOFER, P
MIOSGA, H
KOTTHAUS, JP
[J]. SURFACE SCIENCE, 1978, 73 (01) : 340 - 341

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