ATOMIC-STRUCTURE OF DX CENTERS - THEORY

被引：8

作者：

CHADI, DJ

ZHANG, SB

机构：

[1] Xerox Palo Alto Research Center, Palo Alto, 94304, California

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1991年 / 20卷 / 01期

关键词：

ALGAAS; DX CENTERS; NEGATIVE-U DEFECT;

D O I：

10.1007/BF02651965

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A structural model for DX centers in Al(x)Ga1-xAs alloys which explains their unusual properties in terms of two distinct bonding configurations for donor impurities is proposed. The results of our ab initio self-consistent pseudopotential calculations show DX to be a "negative-U" defect center. It results from a large lattice relaxation which is different for a Group IV than a Group VI donor. The proposed structural model proivides a satisfactory explanation of the properties of DX centers.

引用

页码：55 / 58

页数：4

共 39 条

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