A FLEXIBLE REDUNDANCY TECHNIQUE FOR HIGH-DENSITY DRAMS

被引:21
作者
HORIGUCHI, M [1 ]
ETOH, J [1 ]
AOKI, M [1 ]
ITOH, K [1 ]
MATSUMOTO, T [1 ]
机构
[1] HITACHI LTD,CTR DEVICE DEV,OHME,TOKYO 198,JAPAN
关键词
D O I
10.1109/4.65704
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper points out the limitations of conventional redundancy techniques and proposes a novel redundancy technique for high-density DRAM's, especially DRAM's using multidivided data-line structures. The proposed technique features a flexible relationship between spare lines and spare decoders. It provides higher usage efficiency of both spare lines and spare decoders, as well as lower probability of unsuccessful repair. With this technique the yield improvement factor of 64-Mb DRAM's and beyond is estimated to be more than twice that with the conventional technique in the early stages of production.
引用
收藏
页码:12 / 17
页数:6
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