TEMPERATURE DEPENDENCE OF AVALANCHE BREAKDOWN VOLTAGE IN P-N-JUNCTIONS

被引：21

作者：

MARS, P

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1972年 / 32卷 / 01期

关键词：

D O I：

10.1080/00207217208938266

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：23 / &

共 13 条

[1] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].

BARAFF, GA .

PHYSICAL REVIEW, 1962, 128 (06) :2507-&

[2] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J].

CROWELL, CR ;

SZE, SM .

APPLIED PHYSICS LETTERS, 1966, 9 (06) :242-&

[3] EFFECTIVE CARRIER IONIZATION COEFFICIENT IN SILICON P-N JUNCTIONS AT BREAKDOWN [J].

HALL, R .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1967, 22 (06) :521-&

[4] TEMPERATURE DEPENDENCE OF AVALANCHE BREAKDOWN IN GALLIUM ARSENIDE P-N JUNCTIONS [J].

HALL, R ;

LECK, JH .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 25 (06) :539-&

[5] TEMPERATURE COEFFICIENT OF BREAKDOWN VOLTAGE OF SILICON P-N JUNCTIONS [J].

HALL, R .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1967, 22 (06) :513-&

[6] EFFECTIVE CARRIER IONIZATION RATE IN A P-N JUNCTION AT AVALANCHE BREAKDOWN [J].

KENNEDY, DP ;

OBRIEN, RR .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1965, 9 (5-6) :422-&

[7] BREAKDOWN VOLTAGE OF GRADE GALLIUM ARSENIDE P-N JUNCTIONS [J].

KRESSEL, H ;

BLICHER, A .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2495-&

[8]

LOGAN RA, 1966, J PHYS SOC JPN, VS 21, P434

[9] DETERMINATION OF AVALANCHE BREAKDOWN IN PN JUNCTIONS [J].

MASERJIAN, J .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) :1613-1614

[10] AVALANCHE BREAKDOWN IN GERMANIUM [J].

MILLER, SL .

PHYSICAL REVIEW, 1955, 99 (04) :1234-1241

← 1 2 →