CORRELATION BETWEEN PREIRRADIATION 1/F NOISE AND POSTIRRADIATION OXIDE-TRAPPED CHARGE IN MOS-TRANSISTORS

被引：59

作者：

SCOFIELD, JH ^{[1
]}

DOERR, TP ^{[1
]}

FLEETWOOD, DM ^{[1
]}

机构：

[1] SANDIA NATL LABS, ALBUQUERQUE, NM 87185 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/23.45391

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1946 / 1953

页数：8

共 34 条

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