CHARACTERISTICS OF BE+ AND O+ OR H+ COIMPLANTATION IN GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURES

被引：5

作者：

PEARTON, SJ

REN, F

WISK, PW

FULLOWAN, TR

KOPF, RF

KUO, JM

HOBSON, WS

ABERNATHY, CR

机构：

[1] ATandT Bell Laboratories, Murray Hill

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 02期

关键词：

D O I：

10.1063/1.347352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The simultaneous formation of buried external collector and extrinsic base regions in GaAs/AlGaAs heterojunction bipolar transistor (HBT) structures by co-implantation of Be+ together with O+ or H+ ions is described. Oxygen implants at doses of greater-than-or-equal-to 10(12) cm-2, or proton implants at doses greater-than-or-equal-to 10(14) cm-2, followed by annealing at 500-550-degrees-C, create fully depleted collector regions, while similar anneals lead to significant Be activation and lowered base resistance. Higher annealing temperatures improve this Be activation but restore the initial doping level in the implanted collector region. For Be+ ion doses less-than-or-equal-to 5 x 10(14) cm-2 there are no defects visible by transmission electron microscopy in the HBT structure for annealing temperatures below 800-degrees-C.

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页码：698 / 703

页数：6

相关论文

共 18 条

[1] DUAL IMPLANTATION OF BE+ AND F+ IN GAAS AND ALXGA1-XAS [J].

ADACHI, S .

APPLIED PHYSICS LETTERS, 1987, 51 (15) :1161-1163

[2] COLLECTOR-UP HBTS FABRICATED BY BE+ AND O+ ION IMPLANTATIONS [J].

ADACHI, S ;

ISHIBASHI, T .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) :32-34

[3] BE+/O+-ION IMPLANTATION IN GAAS-ALGAAS HETEROJUNCTIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) :959-964

[4] GAAS/(GA,AL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED OXYGEN-IMPLANTED ISOLATION LAYERS [J].

ASBECK, PM ;

MILLER, DL ;

ANDERSON, RJ ;

EISEN, FH .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) :310-312

[5] GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS USING A SELF-ALIGNED SUBSTITUTIONAL EMITTER PROCESS [J].

CHANG, MF ;

ASBECK, PM ;

MILLER, DL ;

WANG, KC .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) :8-10

[6] EMITTER BASE COLLECTOR SELF-ALIGNED HETEROJUNCTION BIPOLAR-TRANSISTORS USING WET ETCHING PROCESS [J].

EDA, K ;

INADA, M ;

OTA, Y ;

NAKAGAWA, A ;

HIROSE, T ;

YANAGIHARA, M .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) :694-696

[7] NEAR-IDEAL LATERAL SCALING IN ABRUPT AL0.48IN0.52AS/IN0.53GA0.47AS HETEROSTRUCTURE BIPOLAR-TRANSISTORS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

JALALI, B ;

NOTTENBURG, RN ;

CHEN, YK ;

LEVI, AFJ ;

SIVCO, D ;

CHO, AY ;

HUMPHREY, DA .

APPLIED PHYSICS LETTERS, 1989, 54 (23) :2333-2335

[8] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

[9]

NAGATA K, 1985, I PHYS C SER, V79, P589

[10] SUPPRESSION OF EMITTER SIZE EFFECT ON CURRENT GAIN IN ALGAAS/GAAS HBTS [J].

NAKAJIMA, O ;

NAGATA, K ;

ITO, H ;

ISHIBASHI, T ;

SUGETA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1985, 24 (10) :1368-1369