PROPERTIES OF ION-BEAM SYNTHESIZED BURIED SILICON-NITRIDE LAYERS WITH RECTANGULAR NITROGEN PROFILES

被引:33
作者
SKORUPA, W [1 ]
WOLLSCHLAGER, K [1 ]
KREISSIG, U [1 ]
GROTZSCHEL, R [1 ]
BARTSCH, H [1 ]
机构
[1] INST SOLID STATE PHYS & ELECTRON MICROSCOPY, DDR-4010 HALLE, GER DEM REP
关键词
D O I
10.1016/S0168-583X(87)80058-7
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:285 / 289
页数:5
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